Mercury Probe CVmap Systems:

Measurement techniques

Capacitance-Voltage (CV):

• Cd (square wave deep pulse)
• Cq (square wave quasi static)
• Ch (square wave high frequency)
• Sinusoidal Ch (Agilent 4192A, 4285 A, Keithley 590)

Current Voltage (IV):

• Current range 10fA to 1mA, Voltage range up to +/-100V
• extended Voltage range +/- 1000V (Keithley 2410, 237)
• Constant current
• Constant voltage
• Multi terminal IV curves (pseudo MOST technique)

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Silicon

Oxide and gate material (low k, high k) characterization and integrity monitoring:

• Cox (Oxide capacitance)
• tox (Oxide thickness)
• K value (dielectric constant)
• K-f (frequency dependent dielectric constant)
• teq (equivalent oxide thickness)
• Vfb (flat band voltage)
• Dit (Interface trap density)
• (Sheet) Resistance and Resistivity measurement of SiO2 and semi-insulating materials
• TDDB (Time dependent dielectric breakdown) tests:
  • tbd (time to breakdown)
  • Qbd (Charge to Breakdown)
  • Vbd (ramp breakdown Voltage)
  • Defect density (Density of defect causing early breakdown, e.g. Pinhole density)
  • Cumulative failure analysis
  • Furnace Contamination monitoring
• Mobile ion concentration with hot chuck
• Current-Voltage (IV):
  • leakage current mapping
  • ultra thin oxide thickness mapping
• Stress testing (CV, V stress, CV)

Doping and low dose ion implantation monitoring:

• N(W) (doping density profiling of raw wafer and epitaxial layers)
• PØ (partial dose)
• I (Ion implantation density)

Determining carrier generation lifetime:

• C-I (Capacitance vs. Current)
• tg (Carrier generation lifetime)

SOI characterization (B systems):

• Pseudo MOST technique
  • Id-Vg (Drain current vs. Gate Voltage ) at varying Vd (Drain Voltage)
  • gm-V (transconductance vs. Voltage)
  • Electron and hole mobility
  • Ø Mobility degradation factor
• Buried oxide characterization
  • Leakage mapping
  • C-Vg (Capacitance-gate Voltage) for Dit (Interface trap density)

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Compound Semiconductors

• N(W) Carrier density profiling
• Resistivity of semi-insulating substrates or layers
• Pinch-off Voltage

High Resistivity Materials (Undoped Poly-Silicon, Carbon film)

• I-V (Current vs. Voltage)
• (Sheet) Resistance and Resistivity measurement

Ferroelectric materials

• K-E (dielectric vs. electric field)
• P-E (polarization vs. electric field)
• K-f (dielectric vs. frequency) with Model 192 probe station
• K-T (dielectric vs. temperature) with temperature chamber for Tc (Curie temperature)
• Hysteresis loop

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