Applications
Four Point Probe:
- sheet resistance
- resistivity
- film thickness
Mercury Probe CV-map system:
Silicon:
Oxide and gate material (low k, high k) characterization and
integrity monitoring
- Cox (Oxide capacitance)
- tox (Oxide thickness)
- K value (dielectric constant)
- K-f (frequency dependent dielectric constant)
- teq (equivalent oxide thickness)
- Vfb (flat band voltage)
- Dit (Interface trap density)
- (Sheet) Resistance and Resistivity measurement of SiO2
and semi-insulating materials
- TDDB (Time dependent dielectric breakdown) tests:
- tbd (time to breakdown)
- Qbd (Charge to Breakdown)
- Vbd (ramp breakdown Voltage)
- Defect density (Density of defect causing early
breakdown, e.g. Pinhole density)
- Cumulative failure analysis
- Furnace Contamination monitoring
- Mobile ion concentration with hot chuck
- Current-Voltage (IV):
- leakage current mapping
- ultra thin oxide thickness mapping
- Stress testing (CV, V stress, CV)
Doping and low dose ion implantation monitoring:
- N(W) (doping density profiling of raw wafer and epitaxial
layers)
- PØ (partial dose)
- I (Ion implantation density)
Determining carrier generation lifetime
- C-I (Capacitance vs. Current)
- tg (Carrier generation lifetime)
SOI characterization (B systems)
- Pseudo MOST technique
- Id-Vg (Drain current vs. Gate Voltage ) at
varying Vd (Drain Voltage)
- gm-V (transconductance vs. Voltage)
- Electron and hole mobility
- Ø Mobility degradation factor
- Buried oxide characterization
- Leakage mapping
- C-Vg (Capacitance-gate Voltage) for Dit
(Interface trap density)
Compound Semiconductors
- N(W) Carrier density profiling
- Resistivity of semi-insulating substrates or layers
- Pinch-off Voltage
High Resistivity Materials (Undoped Poly-Silicon, Carbon
film)
- I-V (Current vs. Voltage)
- (Sheet) Resistance and Resistivity measurement
Ferroelectric materials
- K-E (dielectric vs. electric field)
- P-E (polarization vs. electric field)
- K-f (dielectric vs. frequency) with Model 192 probe
station
- K-T (dielectric vs. temperature) with temperature chamber
for Tc (Curie temperature)
- Hysteresis loop