We are happy to help you with the probe head selection for your material's needs. Please contact us at info@4dimensions.com for assistance.
Four-Point Probe Selection Guide
| Type | Application | Material | Tip Radius @ Contact Area Radius | Force |
|---|---|---|---|---|
| Type-A | Metal films, ITO, amorphous Si, poly silicon, SOI, bulk substrates | Tungsten Carbide | 25 um or 45um | 90-200g |
| Type-B | General Purpose: medium to thick epitaxial layers, diffused layers, metal films, implants 2-10 microns | Tungsten Carbide | 100um | 90-200g |
| Type-M | epitaxial, diffused and ion implanted layers (500 A to 5 um), especially very shallow ion implanted layers | Tungsten Carbide | 300um @ 120um | 90-200g |
| Type-N | Very shallow implants | Tungsten Carbide | 500um | 90-200g |
| Type-C | III-V compound semiconductors, e.g. GaAs, InAs | Osmium | 100um | 60-150g |
| Mercury | Ultra shallow implants, ultra thin layers | Mercury | ~0 | |
| Custom | Customized tips | Various | Various |